IndiumV3, Main, Repository, bibRecord, 000549

Silicon nanowire-silver indium selenide heterojunction photodiodes

Identifieur interne : 000549 ( Main/Repository ); précédent : 000548; suivant : 000550

Silicon nanowire-silver indium selenide heterojunction photodiodes

Auteurs : RBID : Pascal:13-0344161

Descripteurs français

Pascal (Inist)
- Silicium, Nanofil, Nanomatériau, Argent, Indium, Séléniure, Hétérojonction, Photodiode, Propriété optoélectronique, Couche mince, Gravure, Réseau(arrangement), Pulvérisation irradiation, Interface, Photosensibilité, Diode, Etat interface, Recombinaison superficielle, Génération porteur charge, Haute énergie, AgInSe2, 8107V, 8107B.
Wicri :
- concept : Argent.

English descriptors

KwdEn :
- Arrays, Charge carrier generation, Diodes, Etching, Heterojunctions, High energy, Indium, Interface states, Interfaces, Nanostructured materials, Nanowires, Optoelectronic properties, Photodiodes, Photosensitivity, Selenides, Silicon, Silver, Sputtering, Surface recombination, Thin films.

Abstract

Structural and optoelectronic properties of silicon (Si) nanowire-silver indium selenide (AgInSe₂) thin film heterojunctions were investigated. The metal-assisted etching method was employed to fabricate vertically aligned Si nanowire arrays. Stoichiometric AgInSe₂ films were then deposited onto the nanowires using co-sputtering and sequential selenization techniques. It was demonstrated that the three-dimensional interface between the Si nanowire arrays and the AgInSe₂ thin film significantly improved the photosensitivity of the heterojunction diode compared to the planar reference. The improvements in device performance are discussed in terms of interface state density, reflective losses and surface recombination of the photogenerated carriers, especially in the high-energy region of the spectrum.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000572

Links to Exploration step

Pascal:13-0344161

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Silicon nanowire-silver indium selenide heterojunction photodiodes</title>
<author><name sortKey="Kulakci, Mustafa" uniqKey="Kulakci M">Mustafa Kulakci</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Solar Energy Research and Applications, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Colakoglu, Tahir" uniqKey="Colakoglu T">Tahir Colakoglu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ozdemir, Baris" uniqKey="Ozdemir B">Baris Ozdemir</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Metallurgical and Materials Engineering, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Parlak, Mehmet" uniqKey="Parlak M">Mehmet Parlak</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Solar Energy Research and Applications, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Unalan, Husnu Emrah" uniqKey="Unalan H">Husnu Emrah Unalan</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Solar Energy Research and Applications, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Metallurgical and Materials Engineering, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Turan, Rasit" uniqKey="Turan R">Rasit Turan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Solar Energy Research and Applications, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>Ankara (06800)</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0344161</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0344161 INIST</idno>
<idno type="RBID">Pascal:13-0344161</idno>
<idno type="wicri:Area/Main/Corpus">000572</idno>
<idno type="wicri:Area/Main/Repository">000549</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0957-4484</idno>
<title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title>
<title level="j" type="main">Nanotechnology : (Bristol. Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term>
<term>Charge carrier generation</term>
<term>Diodes</term>
<term>Etching</term>
<term>Heterojunctions</term>
<term>High energy</term>
<term>Indium</term>
<term>Interface states</term>
<term>Interfaces</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Optoelectronic properties</term>
<term>Photodiodes</term>
<term>Photosensitivity</term>
<term>Selenides</term>
<term>Silicon</term>
<term>Silver</term>
<term>Sputtering</term>
<term>Surface recombination</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Silicium</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Argent</term>
<term>Indium</term>
<term>Séléniure</term>
<term>Hétérojonction</term>
<term>Photodiode</term>
<term>Propriété optoélectronique</term>
<term>Couche mince</term>
<term>Gravure</term>
<term>Réseau(arrangement)</term>
<term>Pulvérisation irradiation</term>
<term>Interface</term>
<term>Photosensibilité</term>
<term>Diode</term>
<term>Etat interface</term>
<term>Recombinaison superficielle</term>
<term>Génération porteur charge</term>
<term>Haute énergie</term>
<term>AgInSe2</term>
<term>8107V</term>
<term>8107B</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Argent</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Structural and optoelectronic properties of silicon (Si) nanowire-silver indium selenide (AgInSe<sub>2</sub>
) thin film heterojunctions were investigated. The metal-assisted etching method was employed to fabricate vertically aligned Si nanowire arrays. Stoichiometric AgInSe<sub>2</sub>
 films were then deposited onto the nanowires using co-sputtering and sequential selenization techniques. It was demonstrated that the three-dimensional interface between the Si nanowire arrays and the AgInSe<sub>2</sub>
 thin film significantly improved the photosensitivity of the heterojunction diode compared to the planar reference. The improvements in device performance are discussed in terms of interface state density, reflective losses and surface recombination of the photogenerated carriers, especially in the high-energy region of the spectrum.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0>
</fA01>
<fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0>
</fA03>
<fA05><s2>24</s2>
</fA05>
<fA06><s2>37</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Silicon nanowire-silver indium selenide heterojunction photodiodes</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KULAKCI (Mustafa)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>COLAKOGLU (Tahir)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>OZDEMIR (Baris)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>PARLAK (Mehmet)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>UNALAN (Husnu Emrah)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>TURAN (Rasit)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Center for Solar Energy Research and Applications, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Metallurgical and Materials Engineering, Middle East Technical University</s1>
<s2>Ankara (06800)</s2>
<s3>TUR</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s2>375203.1-375203.7</s2>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>22480</s2>
<s5>354000501979210070</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>30 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0344161</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Structural and optoelectronic properties of silicon (Si) nanowire-silver indium selenide (AgInSe<sub>2</sub>
) thin film heterojunctions were investigated. The metal-assisted etching method was employed to fabricate vertically aligned Si nanowire arrays. Stoichiometric AgInSe<sub>2</sub>
 films were then deposited onto the nanowires using co-sputtering and sequential selenization techniques. It was demonstrated that the three-dimensional interface between the Si nanowire arrays and the AgInSe<sub>2</sub>
 thin film significantly improved the photosensitivity of the heterojunction diode compared to the planar reference. The improvements in device performance are discussed in terms of interface state density, reflective losses and surface recombination of the photogenerated carriers, especially in the high-energy region of the spectrum.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07V</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07B</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Nanofil</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Nanowires</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Argent</s0>
<s2>NC</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Silver</s0>
<s2>NC</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Séléniure</s0>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Selenides</s0>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Hétérojonction</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Heterojunctions</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Photodiode</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Photodiodes</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Propriété optoélectronique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Optoelectronic properties</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Propiedad optoelectrónica</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Thin films</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gravure</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Etching</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Réseau(arrangement)</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Arrays</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Sputtering</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Interface</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Interfaces</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Photosensibilité</s0>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Photosensitivity</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Diode</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Diodes</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Etat interface</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Interface states</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Recombinaison superficielle</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Surface recombination</s0>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Génération porteur charge</s0>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Charge carrier generation</s0>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Generación portador carga</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Haute énergie</s0>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>High energy</s0>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Alta energía</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>AgInSe2</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fN21><s1>329</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000549 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000549 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0344161
   |texte=   Silicon nanowire-silver indium selenide heterojunction photodiodes
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Silicon nanowire-silver indium selenide heterojunction photodiodes

Silicon nanowire-silver indium selenide heterojunction photodiodes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri